Silicon oxide tested for next-generation flash memory

July 18th, 2013

A team of Rice researchers led by James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, has built a 1-kilobit rewritable silicon oxide device with diodes that eliminate data-corrupting crosstalk.
PCB 007
http://www.pcb007.com/pages/zone.cgi?a=93398

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