3-D stackable non-volatile RRAM enables 20GB arrays

August 14th, 2015

3-D stackable non-volatile RRAM enables 20GB arrays
Scientists at Rice University have created a solid-state memory technology that allows for high-density storage with a minimum of errors. James Tour, the T.T. and W.F. Chao Professor of Chemistry, professor of computer science and of materials science and nanoengineering, is quoted. Co-authors are research scientist Jae-Hwang Lee and postdoctoral researchers Yang Yang, Gedeng Ruan, Nam Dong Kim and Yongsung Ji.
EE Times Asia
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