Rice employs nanoporous silicon-oxide material in new RRAM memory devices

July 11th, 2014

Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted.

AZonano.com (This article also appeared in HardOCP, Phys.org, Science Codex, R&D Magazine, Wireless Design & Development, Nanotechnology Now and Science Daily.)
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http://www.azonano.com/news.aspx?newsID=30603

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