Tantalizing discovery may boost memory technology: Rice University scientists make tantalum oxide practical for high-density devices
August 11th, 2015Tantalizing discovery may boost memory technology: Rice University scientists make tantalum oxide practical for high-density devices
Scientists at Rice University have created a solid-state memory technology that allows for high-density storage with a minimum of errors. James Tour, the T.T. and W.F. Chao Professor of Chemistry, professor of computer science and of materials science and nanoengineering, is quoted. Co-authors are research scientist Jae-Hwang Lee and postdoctoral researchers Yang Yang, Gedeng Ruan, Nam Dong Kim and Yongsung Ji.
Nanotechnology Now (Similar articles appeared in Phys.org and e! Science News.)
http://www.nanotech-now.com/news.cgi?story_id=52068
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